SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

摘要

To provide a semiconductor device having improved performance.;A semiconductor substrate has an element formation surface, a light receiving surface opposite thereto, a transfer transistor formed on the side of the element formation surface, a photodiode coupled in series with the transfer transistor, and a wiring formed on the element formation surface. The semiconductor substrate has, on the light receiving surface thereof, a second insulating film which is a reaction film obtained by the reaction between a first amorphous insulating film and the semiconductor substrate made of silicon. Due to holes trapped in the interface states of the second insulating film, an inversion layer is formed on the light receiving side of the semiconductor substrate. It contributes to reduction in dark current noise caused by electrons generated at the crystal defects on the light receiving surface of the semiconductor substrate or in the vicinity thereof.

主权项

1. A semiconductor device comprising:
(a) a semiconductor substrate comprising silicon and having an element formation surface, a light receiving surface opposite to the element formation surface, a transfer transistor formed on the side of the element formation surface, a photodiode coupled in series with the transfer transistor, and a wiring formed over the element formation surface; (b) a first amorphous insulating film formed over the light receiving surface, and (c) an anti-reflective formed over the first amorphous insulating film, wherein the semiconductor substrate and the first amorphous insulating film have therebetween a reaction film obtained by the reaction between the semiconductor substrate comprising silicon and the first amorphous insulating film.