发明名称 WAFER-TO-WAFER BONDING STRUCTURE
摘要 A wafer-to-wafer bonding structure may include: a first wafer including a first insulating layer on a first substrate and on a first copper (Cu) pad that penetrates the first insulating layer and has portions protruding from an upper surface of the first insulating layer, and a first barrier metal layer on a lower surface and sides of the first Cu pad; a second wafer including a second insulating layer on a second substrate and on a second copper (Cu) pad that penetrates the second insulating layer, has portions protruding from an upper surface of the second insulating layer, and is bonded to the first Cu pad, and a second barrier metal layer on a lower surface and sides of the second Cu pad; and a polymer layer covering protruding sides of the first and second barrier metal layers and disposed between the first and second wafers.
申请公布号 US2016013160(A1) 申请公布日期 2016.01.14
申请号 US201514796506 申请日期 2015.07.10
申请人 Samsung Electronics Co., Ltd. 发明人 CHUN Jin-ho;Kang Pil-kyu;Park Byung-Iyul;Park Jae-hwa;Choi Ju-il
分类号 H01L25/065;H01L23/00;H01L23/532;H01L23/522;H01L23/528 主分类号 H01L25/065
代理机构 代理人
主权项 1. A wafer-to-wafer bonding structure comprising: a first wafer comprising a first insulating layer on a first substrate and on a first copper (Cu) pad that penetrates the first insulating layer and has portions protruding from an upper surface of the first insulating layer, and a first barrier metal layer on a lower surface and sides of the first Cu pad; a second wafer comprising a second insulating layer on a second substrate and on a second copper (Cu) pad that penetrates the second insulating layer, has portions protruding from an upper surface of the second insulating layer, and is bonded to the first Cu pad, and a second barrier metal layer on a lower surface and sides of the second Cu pad; and a polymer layer on protruding sides of the first and second barrier metal layers and disposed between the first and second wafers.
地址 Suwon-si KR