| 摘要 |
Provided is a semiconductor device that can perform suitable temperature detection by means of a temperature sensor. In the semiconductor device (2), a first width (W1) of a first section (70a) (namely, the section formed at the top of an active region (100) within a portion extending along a first edge (40a) positioned at the temperature sensor (50) side of a surface electrode (40)) of a surface insulating film (70) is wider than a second width (W2) of a second section (70b) (namely the section formed at the top of the active region (100) within a portion extending along a second edge (40b) of the surface electrode (40)) of the surface insulating film (70). |
