| 发明名称 |
POWER SEMICONDUCTOR MODULE |
| 摘要 |
Power semiconductor module (10, 10′) comprising at least four substrates (DCB1, DCB2, DCB3, DCB4, DCB5, DCB6) disposed on a baseplate (20), each having a first connection point for a higher potential (a) and a second connection point for a lower potential (b), and comprising a first busbar (30) connected to the first connection points for the higher potential (a) and a second busbar (40) connected to the second connection points for the lower potential (b), characterized in that the order of the connection points (b, a) of at least one substrate (DCB4) differs from the order of the connection points (a, b) of the other substrates (DCB1, DCB2, DCB3, DCB5, DCB6). |
| 申请公布号 |
US2016014897(A1) |
申请公布日期 |
2016.01.14 |
| 申请号 |
US201514664175 |
申请日期 |
2015.03.20 |
| 申请人 |
Danfoss Silicon Power GmbH |
发明人 |
Ströbel-Maier Henning;Aggen Christian |
| 分类号 |
H05K1/14;H01L25/07;H05K1/18 |
主分类号 |
H05K1/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power semiconductor module comprising
at least four substrates (DCB1, DCB2, DCB3, DCB4, DCB5, DCB6) disposed on a baseplate, each having a first connection point for a higher potential (a) and a second connection point for a lower potential (b), and a first busbar connected to the first connection points for the higher potential (a) and a second busbar connected to the second connection points for the lower potential (b),characterized in that whereinthe order of the connection points (b, a) of at least one substrate (DCB4) differs from the order of the connection points (a, b) of the other substrates (DCB1, DCB2, DCB3, DCB5, DCB6). |
| 地址 |
Flensburg DE |
