发明名称 REACTION APPARATUS AND METHOD FOR MANUFACTURING A CIGS ABSORBER OF A THIN FILM SOLAR CELL
摘要 The present invention provides an apparatus and a method for manufacturing a CIGS absorber of a thin film solar cell. The apparatus includes a supply chamber configured to provide a flexible substrate coated with precursors. The apparatus further includes a reaction chamber coupled to the supply chamber for at least subjecting the precursors on the flexible substrate to a reactive gas at a first state to form an absorber material. Additionally, the apparatus includes a gas-balancing chamber filled with the reactive gas at a second state. The gas-balancing chamber is communicated with the reaction chamber for automatically updating the first state of the reactive gas to the second state. Moreover, the apparatus includes a control system to maintain the second state of the reactive gas in the gas-balancing chamber at a preset condition and to adjust the transportation of the flexible substrate through the reaction chamber.
申请公布号 US2016013338(A1) 申请公布日期 2016.01.14
申请号 US201514864681 申请日期 2015.09.24
申请人 Li Delin 发明人 Li Delin
分类号 H01L31/0392;H01L31/18;H01L31/032;H01L21/66 主分类号 H01L31/0392
代理机构 代理人
主权项 1. A method for manufacturing a CIGS-based absorber of a thin film solar cell, the method comprising: providing a flexible substrate in a supply chamber as a wound roll, the flexible substrate being coated with precursor materials made by one of the following sequential layers: Cu/In/Ga/Se, Cu/In/Cu/Ga/Se, Cu—In alloy/Ga/Se, Cu—Ga alloy/In/Se, Cu/In—Ga alloy/Se, Cu/Ga/Cu/In/Se, Cu/Ga/In/Se, Cu—Ga alloy/Cu—In alloy/Se, Cu—Ga alloy/Cu—In alloy/Ga/Se, Cu/Cu—In alloy/Ga/Se, and Cu—Ga alloy/In/In—Ga alloy/Se; providing a reaction chamber sequentially coupled between the supply chamber and a receiving chamber, wherein the supply chamber, the reaction chamber, and the receiving chamber are respectively sealed hermetically and the reaction chamber is further divided into a pre-heating region, a reaction region, and a cooling region respectively sealed from each other; providing a gas-balancing chamber coupled to the reaction region with a permeation communication and a common thermal control; introducing a Se-bearing reactive gas respectively in each of the pre-heating region, the reaction region, the cooling region, and the gas-balancing chamber; unfolding the flexible substrate from the wound roll in the supply chamber to transport into the reaction chamber for at least subjecting the precursor materials to a selenization reaction with the Se-bearing reactive gas in the reaction region including additional Se vapor partially released from the precursor materials; maintaining the Se-bearing reactive gas within the gas-balancing chamber at a predetermined state, the Se-bearing reactive gas including additional Se vapor in the reaction region being dynamically balanced at the same predetermined state by the permeation valve and the common thermal control during the selenization reaction to transform the precursor materials into a semiconductor absorber substantially uniformly on the flexible substrate that is continuously transported through the reaction region; transporting the flexible substrate further out of the reaction region to the cooling region to cool the formed semiconductor absorber thereon; and receiving the flexible substrate including the semiconductor absorber in the receiving chamber, the flexible substrate being wound into a roll.
地址 San Jose CA US