| 发明名称 |
FINFET DEVICE WITH GATE OXIDE LAYER |
| 摘要 |
The present disclosure provides a semiconductor structure. In accordance with some embodiments, the semiconductor structure includes a substrate, one or more fins each including a first semiconductor layer formed over the substrate, an oxide layer formed wrapping over an upper portion of each of the one or more fins, and a gate stack including a high-K (HK) dielectric layer and a metal gate (MG) electrode formed wrapping over the oxide layer. The first semiconductor layer may include silicon germanium (SiGex), and the oxide layer may include silicon germanium oxide (SiGexOy). |
| 申请公布号 |
US2016013308(A1) |
申请公布日期 |
2016.01.14 |
| 申请号 |
US201414328350 |
申请日期 |
2014.07.10 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lee Tung Ying;Huang Yu-Lien;Chang I-Ming |
| 分类号 |
H01L29/78;H01L29/51;H01L29/36;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, the device comprising:
a substrate; one or more fins each including a first semiconductor layer formed over the substrate; an oxide layer formed wrapping over an upper portion of each of the one or more fins; and a gate stack including a high-K (HK) dielectric layer and a metal gate (MG) electrode formed wrapping over the oxide layer, wherein the first semiconductor layer includes silicon germanium (SiGex), and wherein the oxide layer includes silicon germanium oxide (SiGexOy). |
| 地址 |
Hsin-Chu TW |
