SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING VERTICAL CHANNEL AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor integrated circuit device having a vertical channel and a method of manufacturing the same are provided. A plurality of active lines are formed in a semiconductor substrate. A gate electrode having a lower height than each active line is formed on a sidewall of the active line. A first insulating layer having a height lower than that of the active line and higher than that of the gate electrode is buried between active lines, and a silicide layer is formed on an exposed upper surface and a lateral surface of the active line.

主权项

1. A method of manufacturing a semiconductor integrated circuit device, the method comprising:
forming an active line over a semiconductor substrate; forming a gate electrode over a lower sidewall of the active line; forming a first insulating layer between the active line and a neighboring active line to bury the gate electrode, wherein an upper portion of the active line is exposed over the first insulating layer; and forming a silicide layer over an upper surface and a sidewall of the upper portion of the active line.