SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

While increasing a threshold voltage of a MOSFET configuring a CMOS, electric power saving of elements is achieved by suppressing excessive increase in the threshold voltage, and occurrence of performance variation among the elements is suppressed. A gate electrode of an NMOS is made of a P-type semiconductor film, a high-permittivity film is provided in a gate insulating film of the NMOS, and an impurity is prevented from being introduced into a channel region of the NMOS. Moreover, a high-permittivity film is provided also in a gate insulating film of a PMOS.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a first insulating film on the semiconductor substrate; a semiconductor layer on the first insulating film; a first gate electrode including a first semiconductor film of a P type, which is formed on the semiconductor layer via a second insulating film; and a pair of first source/drain regions formed by introducing an impurity of an N type into the semiconductor layer next to the first gate electrode, wherein the semiconductor substrate, the first insulating film, and the semiconductor layer configure a SOI substrate, the first gate electrode and the pair of first source/drain regions configure an N-channel-type field-effect transistor, and the second insulating film contains a material having a permittivity higher than a permittivity of silicon oxide.