SEMICONDUCTOR DEVICE HAVING FIN-TYPE FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device includes a first fin structure disposed on a substrate. The first fin structure extends in a first direction. A first sacrificial layer pattern is disposed on the first fin structure. The first sacrificial layer pattern includes a left portion and a right portion arranged in the first direction. A dielectric layer pattern is disposed on the first fin structure and interposed between the left and right portions of the first sacrificial layer pattern. A first active layer pattern extending in the first direction is disposed on the first sacrificial layer pattern and the dielectric layer pattern. A first gate electrode structure is disposed on a portion of the first active layer pattern. The portion of the first active layer is disposed on the dielectric layer pattern. The first gate electrode structure extends in a second direction crossing the first direction.

主权项

1. A semiconductor device, comprising:
a first fin structure disposed on a substrate, the first fin structure extending in a first direction; a first sacrificial layer pattern disposed on the first fin structure, the first sacrificial layer pattern including a left portion and a right portion arranged in the first direction; a dielectric layer pattern disposed on the first fin structure and interposed between the left portion and the right portion of the first sacrificial layer pattern; a first active layer pattern disposed on the first sacrificial layer pattern and the dielectric layer pattern, the first active layer pattern extending in the first direction; and a first gate electrode structure disposed on a portion of the first active layer pattern disposed on the dielectric layer pattern, the first gate electrode structure extending in a second direction crossing the first direction.