SELECTIVE REMOVAL OF SEMICONDUCTOR FINS

摘要

An array of semiconductor fins is formed on a top surface of a substrate. A dielectric material liner is formed on the surfaces of the array of semiconductor fins. A photoresist layer is applied and patterned such that sidewalls of an opening in the photoresist layer are parallel to the lengthwise direction of the semiconductor fins, and are asymmetrically laterally offset from a lengthwise direction passing through the center of mass of a semiconductor fin to be subsequently removed. An angled ion implantation is performed to convert a top portion of dielectric material liner into a compound material portion. The compound material portion is removed selective to the remaining dielectric material liner, and the physically exposed semiconductor fin can be removed by an etch or converted into a dielectric material portion by a conversion process. The dielectric material liner can be removed after removal of the semiconductor fin.

主权项

1. A semiconductor structure comprising:
a plurality of semiconductor fins located on a substrate, each of said plurality of semiconductor fins having a parallel pair of semiconductor sidewalls that are laterally spaced from each other by a uniform fin width; and a dielectric material portion having a parallel pair of dielectric sidewalls that are parallel to said parallel pairs of semiconductor sidewalls, wherein a bottom surface of said dielectric material portion adjoining said parallel pair of dielectric sidewalls has a same width as said uniform fin width.