发明名称 |
SEMICONDUCTOR STRUCTURE AND MANUFACUTING METHOD OF THE SAME |
摘要 |
The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 μm to about 0.2 μm. |
申请公布号 |
US2016013118(A1) |
申请公布日期 |
2016.01.14 |
申请号 |
US201414331046 |
申请日期 |
2014.07.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
TSAI TSUNG-HAN;CHIEN VOLUME;HSU YUNG-LUNG;TSENG CHUNG-BIN;LIAO KENG-YING;CHEN PO-ZEN |
分类号 |
H01L23/48;H01L27/06;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
HSINCHU TW |