发明名称 |
SEMICONDUCTOR DEVICE PRODUCTION METHOD, SHEET-SHAPED RESIN COMPOSITION, DICING TAPE-INTEGRATED SHEET-SHAPED RESIN COMPOSITION |
摘要 |
A production method for a semiconductor device is provided whereby, when peeling a support body from an attached wafer, melting of a sheet-shaped resin composition pasted to the other surface of the wafer can be suppressed. The method comprises: preparing a support body-attached wafer, said support body-attached wafer having the support body bonded, via a temporary fixing layer, to one surface of the wafer having a through electrode formed therein; preparing a dicing tape-integrated sheet-shaped resin composition having a sheet-shaped resin composition having an external shape smaller than the other surface of the wafer formed upon a dicing tape; pasting the other surface of the support body-attached wafer to the sheet-shaped resin composition in the dicing tape-integrated sheet-shaped resin composition; and melting the temporary fixing layer by a solvent and peeling the support body away from the wafer. |
申请公布号 |
US2016013089(A1) |
申请公布日期 |
2016.01.14 |
申请号 |
US201414772724 |
申请日期 |
2014.02.28 |
申请人 |
NITTO DENKO CORPORATION |
发明人 |
Takamoto Naohide;Morita Kosuke;Fukui Akihiro;Hanazono Hiroyuki;Suzuki Akira |
分类号 |
H01L21/683;B32B27/08;C08J5/18;H01L21/78 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device production method, comprising:
a step A of preparing a wafer with a support including a wafer, a temporary fixing layer, and a support bonded to one side of the wafer, on which a through electrode is formed, with the temporary fixing layer interposed therebetween, a step B of preparing a dicing tape-integrated sheet-shaped resin composition including a dicing tape and a sheet-shaped resin composition smaller in an outer shape than the other side of the wafer formed on the dicing tape, a step C of pasting the other side of the wafer with a support to the sheet-shaped resin composition of the dicing tape-integrated sheet-shaped resin composition, and a step D of dissolving the temporary fixing layer with a solvent to peel the support from the wafer. |
地址 |
Ibaraki-shi, Osaka JP |