发明名称 |
PLANARIZED EXTREME ULTRAVIOLET LITHOGRAPHY BLANK WITH ABSORBER AND MANUFACTURING SYSTEM THEREFOR |
摘要 |
An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%. |
申请公布号 |
US2016011500(A1) |
申请公布日期 |
2016.01.14 |
申请号 |
US201514620123 |
申请日期 |
2015.02.11 |
申请人 |
Applied Materials, Inc. |
发明人 |
Hassan Vinayak Vishwanath;Foad Majeed A.;Beasley Cara;Hofmann Ralf |
分类号 |
G03F1/22;C23C16/06;G03F1/38 |
主分类号 |
G03F1/22 |
代理机构 |
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代理人 |
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主权项 |
1. An extreme ultraviolet (EUV) mask blank production system comprising:
a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank including:
a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; anda second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%. |
地址 |
Santa Clara CA US |