发明名称 SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS
摘要 A solid-state imaging device includes: a plurality of unit cells each including at least one light receiving unit and an amplifying transistor which outputs an amplified signal corresponding to an amount of the signal charge photoelectrically converted by the light receiving unit; a plurality of vertical signal lines each for receiving an output signal from the amplifying transistor; a pixel power supply line for supplying a power supply voltage to the amplifying transistor; a plurality of constant current source transistors each connected to a different one of the vertical signal lines; and a bias circuit which controls an amount of current to be supplied to each of the constant current source transistors, based on a variation in the power supply voltage.
申请公布号 US2016014363(A1) 申请公布日期 2016.01.14
申请号 US201514858481 申请日期 2015.09.18
申请人 Panasonic Intellectual Property Management Co., Ltd. 发明人 KITO Takayasu;AMIKAWA Hiroyuki;HIGUCHI Masahiro;ORIGASA Kenichi;FUJINAKA Hiroshi
分类号 H04N5/374;H04N5/347;H04N5/369;H04N5/357;H04N5/378 主分类号 H04N5/374
代理机构 代理人
主权项 1. A solid-state imaging device comprising: an imaging region including a plurality of unit cells arranged in rows and columns, each of the unit cells including at least one light receiving unit, a transfer transistor which transfers a signal charge photoelectrically converted by the at least one light receiving unit, and an amplifying transistor which outputs an amplified signal corresponding to an amount of the signal charge; a plurality of column signal lines each connected to a source electrode of the amplifying transistor, for receiving an output signal from the amplifying transistor; a pixel power supply line connected to a drain electrode of the amplifying transistor, for supplying a power supply voltage to the amplifying transistor; a plurality of constant current source transistors each connected to a different one of the column signal lines; and a bias circuit which controls an amount of current to be supplied to each of the constant current source transistors, based on a variation in the power supply voltage.
地址 Osaka JP