| 发明名称 |
HARDMASK COMPOSITION AND METHOD OF FORMING PATTERN USING THE HARDMASK COMPOSITION |
| 摘要 |
A hardmask composition includes a first material including one of an aromatic ring-containing monomer and a polymer containing a repeating unit including an aromatic ring-containing monomer, a second material including at least one of a hexagonal boron nitride and a precursor thereof, a chalcogenide-based material and a precursor thereof, and a two-dimensional carbon nanostructure and a precursor thereof, the two-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen, and a solvent. |
| 申请公布号 |
US2016011511(A1) |
申请公布日期 |
2016.01.14 |
| 申请号 |
US201514791912 |
申请日期 |
2015.07.06 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
SHIN Hyeonjin;KIM Sangwon;PARK Seongjun |
| 分类号 |
G03F7/11;G03F7/40 |
主分类号 |
G03F7/11 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A hardmask composition comprising:
a first material including one of an aromatic ring-containing monomer and a polymer containing a repeating unit including an aromatic ring-containing monomer; a second material including at least one of a hexagonal boron nitride and a precursor thereof, a chalcogenide-based material and a precursor thereof, and a two-dimensional carbon nanostructure and a precursor thereof, the two-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen; and a solvent. |
| 地址 |
Suwon-si KR |
