SEMICONDUCTOR SUBSTRATE CLEANING SYSTEM AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE

摘要

There is provided a method for cleaning a semiconductor substrate to remove platinum and/or a platinum alloy from the semiconductor substrate having a layer having Si as its constituting component, and the method enables Al, a silicide film, a Si-based insulating film, a Si-based substrate and the like to be effectively cleaned without being damaged.;The method for cleaning a semiconductor substrate to remove platinum and/or a platinum alloy from the semiconductor substrate having a layer having Si as its constituting component comprises a first cleaning step of bringing the semiconductor substrate into contact with a first solution containing nitric acid and/or hydrogen peroxide as main solutes to thereby clean the semiconductor substrate, and a second cleaning step of bringing the semiconductor substrate having undergone the first cleaning step into contact with a second solution containing an oxidizing agent-containing sulfuric acid solution and a halide and having a temperature of 25 to 100° C., to thereby clean the semiconductor substrate.

主权项

1. A method for cleaning a semiconductor substrate to remove platinum and/or a platinum alloy from the semiconductor substrate having a layer having Si as a constituting element thereof, the method comprising:
a first cleaning step of bringing the semiconductor substrate into contact with a first solution containing nitric acid and/or hydrogen peroxide as main solutes to thereby clean the semiconductor substrate; and a second cleaning step of bringing the semiconductor substrate having undergone the first cleaning step into contact with a second solution containing an oxidizing agent-containing sulfuric acid solution and a halide and having a temperature of 25 to 100° C., to thereby clean the semiconductor substrate.