| 发明名称 |
FEPT-C-BASED SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
An FePt—C-based sputtering target containing Fe, Pt, and C, wherein the FePt—C-based sputtering target has a structure in which primary particles of C that contain unavoidable impurities are dispersed in an FePt-based alloy phase containing 33 at % or more and 60 at % or less of Pt with the balance being Fe and unavoidable impurities, the primary particles of C being dispersed so as not to be in contact with each other. |
| 申请公布号 |
US2016013033(A1) |
申请公布日期 |
2016.01.14 |
| 申请号 |
US201414770868 |
申请日期 |
2014.01.31 |
| 申请人 |
TANAKA KIKINZOKU KOGYO K.K. |
发明人 |
GOTO Yasuyuki;YAMAMOTO Takamichi;NISHIURA Masahiro;KUSHIBIKI Ryousuke |
| 分类号 |
H01J37/34;B22F3/14;B22F1/00;C23C14/34;C22C5/04 |
主分类号 |
H01J37/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An FePt—C-based sputtering target containing Fe, Pt, and C, wherein
the FePt—C-based sputtering target has a structure in which primary particles of C that contain unavoidable impurities are dispersed in an FePt-based alloy phase containing 33 at % or more and 60 at % or less of Pt with the balance being Fe and unavoidable impurities, the primary particles of C being dispersed so as not to be in contact with each other. |
| 地址 |
Tokyo JP |
