发明名称 |
Apparatus For Generating Plasma Using Dual Plasma Source And Apparatus For Treating Substrate Including The Same |
摘要 |
The present invention relates to an apparatus for generating plasma using a dual plasma source and a substrate treatment apparatus including the same. A plasma generation apparatus according to an embodiment of the present invention includes: an RF power supply configured to supply an RF signal; a plasma chamber configured to provide a space in which plasma is generated; a first plasma source installed at one part of the plasma chamber to generate plasma; and a second plasma source installed at the other part of the plasma chamber to generate plasma, the second plasma source including: a plurality of insulating loops formed along a circumference of the plasma chamber, wherein a gas passage through which a process gas is injected and moved to the plasma chamber is provided in each insulating loop; and a plurality of electromagnetic field appliers coupled to the insulating loops and receiving the RF signal to excite the process gas moved through the gas passage to a plasma state. |
申请公布号 |
US2016013029(A1) |
申请公布日期 |
2016.01.14 |
申请号 |
US201414459179 |
申请日期 |
2014.08.13 |
申请人 |
PSK Inc. |
发明人 |
Chae Hee Sun;Cho Jeong Hee;Lee Jong Sik;Lee Han Saem;Kim Hyun Jun |
分类号 |
H01J37/32;H01L21/67 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
1. A plasma generation apparatus comprising:
an RF power supply configured to supply an RF signal; a plasma chamber configured to provide a space in which plasma is generated; a first plasma source installed at one part of the plasma chamber to generate plasma; and a second plasma source installed at the other part of the plasma chamber to generate plasma, the second plasma source comprising: a plurality of insulating loops formed along a circumference of the plasma chamber, wherein a gas passage through which a process gas is injected and moved to the plasma chamber is provided in each insulating loop; and a plurality of electromagnetic field appliers coupled to the insulating loops and receiving the RF signal to excite the process gas moving through the gas passage to a plasma state. |
地址 |
Gyeonggi-do KR |