发明名称 |
METHOD OF OPERATING A VOLATILE MEMORY DEVICE AND A MEMORY CONTROLLER |
摘要 |
A method of operating a volatile memory device includes storing address information of weak cell rows. According to some examples, after writing to a weak cell row, a refresh operation is performed on the weak cell row within a predetermined time. According to some examples, the writing operation to a weak cell row may be performed with a longer write recovery time than a write recovery time to normal cell rows. |
申请公布号 |
US2016012880(A1) |
申请公布日期 |
2016.01.14 |
申请号 |
US201514858140 |
申请日期 |
2015.09.18 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KIM Sang-Yun;SON Jong-Pil;KIM Su-A;PARK Chul-Woo;HWANG Hong-Sun |
分类号 |
G11C11/406;G11C11/408;G11C11/4096 |
主分类号 |
G11C11/406 |
代理机构 |
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代理人 |
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主权项 |
1. A method of operating a memory device having an array of memory cells, comprising:
writing data to first memory cells of the array of memory cells having a first address; determining if the first address is one of a group of predetermined addresses; and in response to the determining, adjusting a refresh sequence to include a first refresh operation for the first memory cells having the first address. |
地址 |
Suwon-si KR |