发明名称 METHOD OF OPERATING A VOLATILE MEMORY DEVICE AND A MEMORY CONTROLLER
摘要 A method of operating a volatile memory device includes storing address information of weak cell rows. According to some examples, after writing to a weak cell row, a refresh operation is performed on the weak cell row within a predetermined time. According to some examples, the writing operation to a weak cell row may be performed with a longer write recovery time than a write recovery time to normal cell rows.
申请公布号 US2016012880(A1) 申请公布日期 2016.01.14
申请号 US201514858140 申请日期 2015.09.18
申请人 Samsung Electronics Co., Ltd. 发明人 KIM Sang-Yun;SON Jong-Pil;KIM Su-A;PARK Chul-Woo;HWANG Hong-Sun
分类号 G11C11/406;G11C11/408;G11C11/4096 主分类号 G11C11/406
代理机构 代理人
主权项 1. A method of operating a memory device having an array of memory cells, comprising: writing data to first memory cells of the array of memory cells having a first address; determining if the first address is one of a group of predetermined addresses; and in response to the determining, adjusting a refresh sequence to include a first refresh operation for the first memory cells having the first address.
地址 Suwon-si KR
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