发明名称 |
Optoelectronic Component And Method For Producing An Optoelectronic Component |
摘要 |
An optoelectronic component, comprising: a carrier (1) and a semiconductor layer sequence (20) configured for emission of electromagnetic primary radiation and arranged on the carrier (10). The semiconductor layer sequence (20) comprises a radiation main side (21) facing away from the carrier. A connecting layer is applied directly at least on the radiation main side (21) of the semiconductor layer sequence. A conversion element (40) is configured for emission of electromagnetic secondary radiation and is arranged directly on connecting layer (30), and being formed as a prefabricated body. Connecting layer (30) comprises at least one inorganic filler (31) embedded in matrix material and being formed with a layer thickness of less than or equal to 2 μm. The prefabricated body is attached to the semiconductor layer sequence by the connecting layer which is configured in order to filter out a short-wave component of the electromagnetic primary radiation. |
申请公布号 |
US2016013369(A1) |
申请公布日期 |
2016.01.14 |
申请号 |
US201414769699 |
申请日期 |
2014.03.04 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
SCHMIDTKE Kathy;STOLL Ion;ALBRECHT Tony;KLEIN Markus |
分类号 |
H01L33/50;H01L33/54;H01L33/00;H01L33/48;H01L33/62 |
主分类号 |
H01L33/50 |
代理机构 |
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代理人 |
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主权项 |
1. An optoelectronic component, comprising:
a carrier; a semiconductor layer sequence which is configured for the emission of electromagnetic primary radiation and is arranged on the carrier, wherein the semiconductor layer sequence comprises a radiation main side facing away from the carrier, a connecting layer which is applied directly at least on the radiation main side of the semiconductor layer sequence; a conversion element which is configured for the emission of electromagnetic secondary radiation and is arranged directly on the connecting layer, the conversion element being formed as a prefabricated body; the connecting layer comprising at least one inorganic filler embedded in a matrix material; the connecting layer being formed with a layer thickness of less than or equal to 2 μm; the prefabricated body being attached to the semiconductor layer sequence by the connecting layer; and, the connecting layer being configured in order to filter out a short-wave component of the electromagnetic primary radiation. |
地址 |
Regensburg DE |