发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape.
申请公布号 US2016013365(A1) 申请公布日期 2016.01.14
申请号 US201514627721 申请日期 2015.02.20
申请人 CHUN Dae Myung;YEON Ji Hye;HEO Jae Hyeok;KUM Hyun Seong;SEONG Han Kyu;CHOI Young Jin 发明人 CHUN Dae Myung;YEON Ji Hye;HEO Jae Hyeok;KUM Hyun Seong;SEONG Han Kyu;CHOI Young Jin
分类号 H01L33/24;H01L33/00;H01L33/32;H01L33/54;H01L33/06;H01L33/08 主分类号 H01L33/24
代理机构 代理人
主权项 1. A method for manufacturing a semiconductor light emitting device, the method comprising steps of: forming a base layer with a first conductivity-type semiconductor on a substrate; forming a mask layer and a mold layer having a plurality of openings exposing portions of the base layer on the base layer; forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape; and sequentially forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores, wherein the step of forming the plurality of first conductivity-type semiconductor cores comprises steps of: forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion; removing the mold layer; and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape.
地址 Hwaseong-si KR
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