发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape. |
申请公布号 |
US2016013365(A1) |
申请公布日期 |
2016.01.14 |
申请号 |
US201514627721 |
申请日期 |
2015.02.20 |
申请人 |
CHUN Dae Myung;YEON Ji Hye;HEO Jae Hyeok;KUM Hyun Seong;SEONG Han Kyu;CHOI Young Jin |
发明人 |
CHUN Dae Myung;YEON Ji Hye;HEO Jae Hyeok;KUM Hyun Seong;SEONG Han Kyu;CHOI Young Jin |
分类号 |
H01L33/24;H01L33/00;H01L33/32;H01L33/54;H01L33/06;H01L33/08 |
主分类号 |
H01L33/24 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a semiconductor light emitting device, the method comprising steps of:
forming a base layer with a first conductivity-type semiconductor on a substrate; forming a mask layer and a mold layer having a plurality of openings exposing portions of the base layer on the base layer; forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape; and sequentially forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores, wherein the step of forming the plurality of first conductivity-type semiconductor cores comprises steps of: forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion; removing the mold layer; and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape. |
地址 |
Hwaseong-si KR |