发明名称 STATIC MEMORY APPARATUS AND DATA READING METHOD THEREOF
摘要 A static memory apparatus and a data reading method thereof are provided. The static memory apparatus includes a plurality of memory cells, a plurality of dummy memory cells, a sense amplifier, and a discharge current adjuster. The dummy memory cells respectively include a plurality discharge ends for discharging charges on a dummy bit line. The sense amplifier is enabled for a sensing and amplifying operation according to a signal on the dummy bit line, and the sense amplifier generates readout data accordingly. The discharge current adjuster adjusts at least one discharge current on at least one controlled discharge end according to an operating voltage of the memory cells.
申请公布号 US2016012870(A1) 申请公布日期 2016.01.14
申请号 US201414457125 申请日期 2014.08.12
申请人 Chen Biao;Zhang Zhao-Yong;Wu Hao;Lee Kun-Ti 发明人 Chen Biao;Zhang Zhao-Yong;Wu Hao;Lee Kun-Ti
分类号 G11C7/12;G11C7/06 主分类号 G11C7/12
代理机构 代理人
主权项 1. A static memory apparatus, comprising: a plurality of memory cells arranged to form a memory array coupled to a plurality of bit lines; a plurality of dummy memory cells coupled to a dummy bit line and respectively comprising a plurality of discharge ends to discharge charges on the dummy bit line; a sense amplifier coupled to the bit lines and the dummy bit line and performing a sensing and amplifying operation on signals on the bit lines according to a signal on the dummy bit line to generate readout data; and a discharge current adjuster coupled to at least one controlled discharge end of the discharge ends and adjusting a discharge current on the at least one controlled discharge end according to an operating voltage received by the memory cells.
地址 Suzhou CN