SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

This semiconductor device (100) comprises an element part (170) and a gate pad part (180) both on the same wide-gap semiconductor substrate (110), wherein: the element part (170) has a first trench structure (146) including a plurality of first protection trenches (142) formed so as to be deeper than gate trenches (118), and a first embedded layer (144); the gate pad part (180) has a second trench structure (156) including a plurality of second protection trenches (152) and a second embedded layer (154); the second trench structure (156) has either a structure including a second embedded layer made of a p-type second semiconductor region (158) and an electric conductor, or a structure including a second embedded layer made of a metal layer forming a Schottky contact; and the second embedded layer (154) is electrically connected to a source electrode layer (128). This semiconductor device (100) provides a semiconductor device that has high voltage resistance and is capable of high-speed switching, and in which variations in electric characteristics are less likely to occur and the gate pad part is less likely to break.