MAGNETIC STORAGE TRACK AND MAGNETIC MEMORY

摘要

A magnetic storage track (20) and magnetic memory, comprising a plurality of stacked storage track units (22); and a transition layer (23) is disposed between two neighboring storage track units (22); the transition layer (23) is formed by a semiconductor material deposited on an insulating material, and comprises a gating circuit (231) and a read/write device (232). Since the magnetic storage track (20) comprises the plurality of stacked storage track units (22), the length of the magnetic storage track (20) is determined by the lengths of the plurality of storage track units (22). Therefore, the length of the magnetic storage track (20) can be increased by increasing the number of storage track units (22), thus avoiding increasing the lengths of the storage track units (22), and solving the technical problem of increased process difficulties caused by increasing the length of the magnetic storage track (20), while improving the storage capacity of the magnetic storage track (20).