发明名称 TERMINAL STRUCTURE, SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE AND TERMINAL FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a terminal structure, a semiconductor device, an electronic device and a terminal formation method, which inhibit a solder material from diffusing to a lateral face of a pillar including a metallic material after solder bonding to improve bonding reliability.SOLUTION: A terminal structure comprises: a pillar 1 containing Cu which is a first metallic material; and a cover layer 2 which contains Ni that is a second metallic material where a solder material diffuses more slowly than in the first metallic material, and which covers a top face and a lateral face of the pillar 1. The cover layer 2 successfully prevents the solder material from diffusing to the lateral face of the pillar 1 after solder bonding.
申请公布号 JP2016006812(A) 申请公布日期 2016.01.14
申请号 JP20140126887 申请日期 2014.06.20
申请人 FUJITSU LTD 发明人 AKAMATSU TOSHIYA
分类号 H01L21/60;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/60
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