| 发明名称 |
MAGNETORESISTIVE EFFECT ELEMENT |
| 摘要 |
A magnetoresistive effect element includes a recording layer having magnetic anisotropy and a variable magnetization direction, a reference layer having magnetic anisotropy and an invariable magnetization direction, an intermediate layer between the recording layer and the reference layer, an underlayer containing scandium (Sc) and disposed on a surface side of the recording layer opposite to a surface side on which the recording layer is disposed, and a side wall layer containing an oxide of Sc and disposed on side surfaces of the recording layer and the intermediate layer. |
| 申请公布号 |
US2016013397(A1) |
申请公布日期 |
2016.01.14 |
| 申请号 |
US201514637254 |
申请日期 |
2015.03.03 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KITAGAWA Eiji;AMANO Minoru;YAKABE Megumi;MAEKAWA Hiroaki |
| 分类号 |
H01L43/02;H01L43/12;H01L43/08 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetoresistive effect element comprising:
a recording layer having magnetic anisotropy and a variable magnetization direction; a reference layer having magnetic anisotropy and an invariable magnetization direction; an intermediate layer between the recording layer and the reference layer; an underlayer containing scandium (Sc) and disposed on a surface side of the recording layer opposite to a surface side on which the reference layer is disposed; and a side wall layer containing an oxide of Sc and disposed on side surfaces of the recording layer and the intermediate layer. |
| 地址 |
Tokyo JP |
