SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD

摘要

Provided are a semiconductor substrate production method and the like that make it possible to improve the electrical characteristics of a semiconductor substrate provided with first and second semiconductor layers that are in contact with each other. The semiconductor substrate production method is provided with: an irradiation step in which a first impurity on the surface of a first semiconductor layer is irradiated in a vacuum and a first impurity on the surface of a second semiconductor layer is irradiated in a vacuum; a bonding step in which the surface of the first semiconductor layer and the surface of the second semiconductor layer are bonded in the vacuum in which the irradiation step was performed and a semiconductor substrate having a bonded interface is produced; and a heat treatment step in which the semiconductor substrate that was produced in the bonding step is subjected to heat treatment. The first impurity is an inactive impurity that does not cause a carrier to be generated in the first semiconductor layer or the second semiconductor layer. The heat treatment is performed such that the width of the depth-direction concentration profile of the first impurity included in the first semiconductor layer and the second semiconductor layer is narrower after the heat treatment than before the heat treatment.