| 摘要 |
Provided is a three-dimensional semiconductor memory device. The three-dimensional semiconductor memory device comprises: a stacked structure including a plurality of conductive patterns vertically stacked on a substrate; a selection structure including a plurality of selection conductive patterns stacked on the stacked structure; a channel structure connected to the substrate by penetrating the selection structure and the stacked structure; an upper wiring for crossing the selection structure; and a contact pad arranged on the top of the channel structure, and electrically connecting the upper wiring and the channel structure. A lower surface of the contact pad can be positioned under an upper surface, which is an uppermost layer, of the selection conductive pattern. |
