| 摘要 |
A photomask structure and method of etching is provided herein. In one embodiment, a photomask includes a translucent substrate (102) and an opaque multi-layer absorber layer (104) disposed over the substrate. The opaque multi-layer absorber layer comprises a self-mask layer (108) disposed over a bulk absorber layer (106). The self-mask layer comprises one of nitrogenized tantalum and silicon-based materials (TaSiON), tantalum boron oxide-based materials (TaBO), or oxidized and nitrogenized tantalum-based materials (TaON). The bulk absorber layer comprises on of tantalum silicide-based materials (TaSi), nitrogenized tantalum boride-based materials (TaBN), or tantalum nitride-based materials (TaN). The self-mask layer has a low etch rate during the bulk absorber layer etch step, thereby acting as a hard mask. |
