| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a piezoelectric device which avoids characteristic deterioration due to the diffusion of a component metal of a piezoelectric material and peeling of a film when the piezoelectric material is formed and improves the crystallinity and the flatness of the piezoelectric material, and to provide a manufacturing method of the piezoelectric device. <P>SOLUTION: A piezoelectric material 14 is formed on a substrate 11 of a piezoelectric device 1 through a ground layer 13 including an electrode layer 23. The ground layer 13 includes a first layer 21 and a second layer 22. The first layer 21 is composed of a metal oxide or a metal nitride. The second layer 22 is composed of the same metal as the component metal of the metal oxide of the first layer 21 or the same metal as the component metal of the metal nitride of the first layer 21. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
