发明名称 Optocoupler circuit
摘要 <p>An optocoupler device facilitates on-chip galvanic isolation. In accordance with various example embodiments, an optocoupler circuit includes a silicon-on-insulator substrate having a silicon layer on a buried insulator layer, a silicon-based light-emitting diode (LED) having a silicon p-n junction in the silicon layer, and a silicon-based photodetector in the silicon layer. The LED and photodetector are respectively connected to galvanically isolated circuits in the silicon layer. A local oxidation of silicon (LOCOS) isolation material and the buried insulator layer galvanically isolate the first circuit from the second circuit to prevent charge carriers from moving between the first and second circuits. The LED and photodetector communicate optically to pass signals between the galvanically isolated circuits.</p>
申请公布号 EP2490263(A3) 申请公布日期 2016.01.13
申请号 EP20120155336 申请日期 2012.02.14
申请人 NXP B.V. 发明人 GOLUBOVIC, DUSAN;KOOPS, GERHARD;VANHOUCKE, TONY;VAN DALEN, ROB
分类号 H01L27/15;H01L27/14;H01L31/153;H01L31/173;H01L33/34 主分类号 H01L27/15
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