| 摘要 |
Embodiments of the present invention are to provide an electronic device which improves characteristics of a variable resistance device, and a method for fabricating the same. The electronic device includes a semiconductor memory. The semiconductor memory may include an interlayer dielectric layer including a groove on a substrate; a first nitride layer formed on a sidewall of the groove; a selector which is formed on a bottom part of the groove and the first nitride layer on the sidewall of the groove; a stack including a variable resistance pattern formed on a lower structure including the selector; and a second nitride layer formed on a sidewall and an upper part of the stack. According to the electronic device and the method for fabricating the same, the characteristics of the variable resistance device can be improved. |
