| 摘要 |
<p>PURPOSE: A method for manufacturing a field effect transistor, a method for manufacturing a display device, a method for manufacturing an x ray photographing device, and a method for manufacturing an optical sensor are provided to perform a heating process at a temperature lower than 240°C, thereby reducing the power consumption of a heating furnace. CONSTITUTION: An active layer(18) is made of an amorphous oxide semiconductor. The active layer includes In, Ga, and Zn. The active layer is heated at a temperature lower than 240°C when the composition ratio of elements is In:Ga:Zn=a:b:c.</p> |
