| 摘要 |
A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell, which includes an absorption layer made of a first compound-semiconductor material which lattice matches with gallium arsenide (GaAs) or germanium (Ge); and a window layer made of aluminuin indium phosphide (Al x1 In 1-x1 P (0<x1‰¤1)), arranged on an incident side of the absorption layer in a light incident direction, having a lattice constant less than a lattice constant of the absorption layer, and having a band gap greater than a band gap of the absorption layer. |
