发明名称 Method of patterning a thin film layer using phase-change materials
摘要 A method and system for masking a surface to be etched is described. A droplet source ejects droplets of a masking material for deposit on a thin-film or other substrate surface to be etched. The temperature of the thin-film or substrate surface is controlled such that the droplets rapidly freeze upon contact with the thin-film or substrate surface. The thin-film or substrate is then etched. After etching the masking material is removed.
申请公布号 EP1251398(B1) 申请公布日期 2016.01.13
申请号 EP20020008866 申请日期 2002.04.19
申请人 XEROX CORPORATION 发明人 WONG, WILLIAM S.;STREET, ROBERT A.;WHITE, STEPHEN D.;MATUSIAK, ROBERT;APTE, RAJ B.
分类号 B41M5/00;C23F1/00;B41M3/00;G02F1/1368;G03F1/00;G03F7/20;H01L21/033;H01L21/308;H01L27/12 主分类号 B41M5/00
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