Method for making a micromechanical SiC structure

摘要

The method involves generating a micromechanical structure in a layer construction under application of a structured silicon-germanium sacrificial layer (4) and a silicon carbide-functional layer. A silicon carbide layer is deposited and structured as a functional layer by the structured silicon-germanium sacrificial layer, and an access opening is formed in a region of the silicon-germanium sacrificial layer. A part of a material of the silicon-germanium sacrificial layer in an etching contact over the access opening in the functional layer is removed.