| 摘要 |
<p>In this method for producing a photoelectric conversion device: an i-type non-crystalline layer and an n-type non-crystalline layer comprising a non-crystalline semiconductor film are formed on the light-receiving surface of a semiconductor substrate; an i-type non-crystalline layer and an n-type non-crystalline layer comprising a non-crystalline semiconductor film are formed on the back surface of the semiconductor substrate; a protective layer is formed on the n-type non-crystalline layer; an insulating layer is formed on the n-type non-crystalline layer; and in the state where the top of the n-type non-crystalline layer is covered by the protective layer, patterning is performed by eliminating a portion of the i-type non-crystalline layer, the n-type non-crystalline layer, and the insulating layer.</p> |
