| 摘要 |
<p>A transistor manufacturing method includes: forming a gate electrode above a substrate; forming a gate insulator above the gate electrode; forming source and drain electrodes above the gate insulator; forming a sacrificial layer above the source and drain electrodes; forming a partition wall layer above the sacrificial layer; forming an opening by patterning the partition wall layer to partly expose the sacrificial layer; removing the sacrificial layer to expose the source and drain electrodes; and forming an organic semiconductor layer to cover the source and drain electrodes and the gate insulator, wherein the source and drain electrodes occupy 50% or more of a surface area of the opening, and the source and drain electrodes are spaced apart at an interval smaller than an average granular diameter of crystals each of which is at least partly positioned above the source or drain electrode.</p> |
