POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A power semiconductor device according to an embodiment of the present disclosure includes: a first semiconductor region of a first conductivity type; second semiconductor regions of a second conductivity type, formed in the upper inside of the first semiconductor region; a third semiconductor region of the first conductivity type formed in the upper inside of the second semiconductor region; a first trench which is formed in at least a part between the second semiconductor regions, is inserted into a part of the first semiconductor region, and includes an insulating layer formed on the surface and a conductive material filling the inner part; and a gate formed on the upper part of the second semiconductor region. The gate is electrically connected to the first trench, to form a path for electrons to move.