发明名称 半導体装置
摘要 <p>A semiconductor device includes a first semiconductor substrate and a second semiconductor substrate laminated with an insulating layer, a first transmission line formed on the first semiconductor substrate, the first transmission line including a signal line and a ground, a second transmission line formed on the second semiconductor substrate, the second transmission line including a signal line and a ground, a first via layer for the signal lines, the first via layer for the signal lines being formed of a conductor layer formed within a via hole, a first via layer for the grounds, the first via layer for the grounds being formed of a conductor layer formed within a via hole, and a second via layer for the grounds, the second via layer for the grounds being formed of a conductor layer formed within a via hole.</p>
申请公布号 JP5842368(B2) 申请公布日期 2016.01.13
申请号 JP20110087048 申请日期 2011.04.11
申请人 ソニー株式会社 发明人 澤田 憲
分类号 H01L21/3205;H01L21/768;H01L21/822;H01L23/522;H01L27/04 主分类号 H01L21/3205
代理机构 代理人
主权项
地址