HARDMASK COMPOSITION AND METHOD OF FORMING PATTERNING USING THE HARDMASK COMPOSITION

摘要

Disclosed is a hardmask composition which comprises: (i) a first material selected among polymers which are composed of aromatic ring-containing monomers and a repeating unit comprising aromatic ring-containing monomers; (ii) one or more second materials selected from the group comprising a two-dimensional carbon nanostructure and a precursor thereof, wherein the two-dimensional carbon nanostructure further comprises hexagonal boron nitride, a chalcogenide-based material, and 0.01-40 atom% of oxygen; and (iii) a solvent. In addition, disclosed is a pattern formation method using the hardmask composition.