发明名称 |
N-CHANNEL AND P-CHANNEL FINFET CELL ARCHITECTURE WITH INTER-BLOCK INSULATOR |
摘要 |
A finFET block architecture includes a first set of semiconductor fins having a first conductivity type, and a second set of semiconductor fins having a second conductivity type. An inter-block insulator is placed between outer fins of the first and second sets. A patterned gate conductor layer includes a first plurality of gate traces extending across the set of fins in the first block without crossing the inter-block insulator, and a second plurality of gate traces extending across the set of fins in the second block without crossing the inter-block insulator. Patterned conductor layers over the gate conductor layer are arranged in orthogonal layout patterns, and include an inter-block connector arranged to connect gate traces in the first and second blocks. |
申请公布号 |
EP2737523(A4) |
申请公布日期 |
2016.01.13 |
申请号 |
EP20120819516 |
申请日期 |
2012.07.23 |
申请人 |
SYNOPSYS, INC. |
发明人 |
KAWA, JAMIL;MOROZ, VICTOR;SHERLEKAR, DEEPAK |
分类号 |
H01L21/77;G06F17/50;H01L21/28;H01L21/336;H01L23/528;H01L27/02;H01L27/092;H01L27/12;H01L29/78 |
主分类号 |
H01L21/77 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|