| 摘要 |
The structure (30) has a heat removal structure (40) including a bond layer (42) that is applied to an initial substrate (20) or discreet, integrated components (10). A heat removal layer (44) is applied to the bond layer, and comprises a material with double heat conductivity i.e. average heat conductivity, of the initial substrate or discreet, integrated components. Metallic thermal bridges (46) e.g. vertical through connection parts, thermally connect the discreet, integrated components with the heat removal structure through the bond layer. An independent claim is also included for a method for manufacturing a semiconductor component-composite structure. |
