WAFER FOR IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention suggests a wafer for an image sensor and a method of manufacturing the same. The wafer for an image sensor includes a substrate; a gettering layer which is formed by injecting hydrogen ions into the substrate, and getters metal impurities; and an epitaxial layer formed on a surface of the substrate. The gettering layer is formed by injecting hydrogen ions of which a dosed amount is 1×10^(15) to 1×10^(16) ions/cm^2.