SILICON-GERMANIUM, QUANTUM-WELL, LIGHT-EMITTING DIODE

摘要

A silicon-germanium, quantum-well, light-emitting diode. The light-emitting diode includes a p-doped portion, a quantum-well portion, and an p-doped portion. The quantum-well portion is disposed between the p-doped portion and the n-doped portion. The quantum-well portion includes a carrier confinement region that is configured to facilitate luminescence with emission of light produced by direct recombination of an electron with a hole confined within the carrier confinement region. The p-doped portion includes a first alloy of silicon-germanium, and the n-doped portion includes a second alloy of silicon-germanium.