| 摘要 |
PROBLEM TO BE SOLVED: To provide a booster circuit and a memory device with which it is possible to reduce a fluctuation in the step-up voltage of a memory cell word line due to temperature.SOLUTION: A booster circuit 500 steps up the voltage of a memory cell word line WL. A pulse having a first high-level period is supplied to a first ferroelectric capacitance Cf1 connected between the word line WL and a first node n1, a second ferroelectric capacitance Cf2 connected between the word line WL and a second node, and the first node n1, and a high-level voltage is supplied to the second node in at least the first high-level period. |
