Carrier-less silicon interposer

摘要

An interposer has conductive elements at a first side and terminals at a second side opposite therefrom, for connecting with a microelectronic element and a second component, respectively. The component includes a first element having a thermal expansion coefficient less than 10 ppm/° C., and an insulating second element, with a plurality of openings extending from the second side through the second element towards the first element. A conductive structure extending through the openings in the second element and through the first element electrically connects the terminals with the conductive elements.

主权项

1. A component, comprising:
a plurality of conductive elements at a first side of the component configured for connection with a plurality of corresponding contacts of a microelectronic element; a plurality of terminals at a second side of the component opposite the first side, the terminals configured for connection with a plurality of corresponding contacts of a second component external to the component; a first element having a coefficient of thermal expansion of less than 10 ppm/° C., the first element having a first surface coincident with or adjacent to the first side of the component and a second surface opposite the first surface; an insulating second element coupled to the second surface of the first element, the second element having a surface coincident with or adjacent to the second side of the component and a plurality of openings extending from the surface towards the second surface of the first element, the second element including insulating structure formed of at least one second material different from a first material of which the first element is formed; and a conductive structure extending through the openings in the second element and through the first element, the conductive structure electrically connecting the plurality of terminals with the conductive elements, wherein the conductive structure includes a conductive material extending within the opening and a metalized via extending within the first element in a first direction of a thickness of the first element in contact with the conductive material.