发明名称 |
Semiconductor storage device having a voltage generator |
摘要 |
According to one embodiment, a nonvolatile semiconductor storage device includes a memory cell, a voltage generator configured to output a first voltage and a second voltage, and a controller. The controller executes a write operation, which includes a first read operation, a program operation, and a verify operation. The controller executes the first read operation before the program operation and the verify operation. The controller executes the first read operation by applying the first voltage to a gate of the memory cell. The controller executes an erase verify operation by applying the second voltage to the gate of the memory cell. The first voltage is higher than the second voltage. |
申请公布号 |
US9236135(B2) |
申请公布日期 |
2016.01.12 |
申请号 |
US201414483877 |
申请日期 |
2014.09.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
Kamata Yoshihiko;Yokota Yuko |
分类号 |
G11C7/22;G11C16/26;G11C16/14;G11C16/34 |
主分类号 |
G11C7/22 |
代理机构 |
Holtz, Holtz, Goodman & Chick PC |
代理人 |
Holtz, Holtz, Goodman & Chick PC |
主权项 |
1. A nonvolatile semiconductor storage device comprising:
a memory cell; a voltage generator configured to output a first voltage and a second voltage; and a controller configured to execute a write operation, the write operation including a first read operation, a program operation, and a verify operation, the controller being configured to execute the first read operation before the program operation and the verify operation, the controller being configured to execute the first read operation by applying the first voltage to a gate of the memory cell, the controller being configured to execute an erase verify operation by applying the second voltage to the gate of the memory cell, the first voltage being higher than the second voltage. |
地址 |
Tokyo JP |