| 发明名称 | Electromagnetic wave generation device and detection device | ||
| 摘要 | The invention provides an electromagnetic wave generation device. The device includes a substrate provided with a terahertz wave oscillation section including a resonant tunneling diode structure, a two-dimensional electron layer having a semiconductor heterojunction structure, and a transistor section including a source electrode and a drain electrode provided at end portions of the two-dimensional electron layer and a gate electrode provided above the two-dimensional electron layer. The terahertz wave output of the terahertz wave oscillation section changes distribution of electrons in the two-dimensional electron layer. | ||
| 申请公布号 | US9236833(B2) | 申请公布日期 | 2016.01.12 |
| 申请号 | US201414155033 | 申请日期 | 2014.01.14 |
| 申请人 | Canon Kabushiki Kaisha | 发明人 | Ouchi Toshihiko;Sekiguchi Ryota |
| 分类号 | H03B7/08;H03B7/00;H03C7/02;H03B17/00;H03C7/00 | 主分类号 | H03B7/08 |
| 代理机构 | Canon U.S.A., Inc. IP Division | 代理人 | Canon U.S.A., Inc. IP Division |
| 主权项 | 1. An electromagnetic wave generation device, the device comprising a substrate, the substrate being provided with a terahertz wave oscillation section including a resonant tunneling diode structure, a two-dimensional electron layer having a semiconductor heterojunction structure, and a transistor section including a source electrode and a drain electrode provided at end portions of the two-dimensional electron layer and a gate electrode provided above the two-dimensional electron layer, wherein the terahertz wave oscillation section and the transistor section are arranged on the same side of the substrate, and wherein the terahertz wave oscillation section is configured to apply AC electric field of a terahertz wave output of the terahertz wave oscillation section to the source electrode and the drain electrode. | ||
| 地址 | Tokyo JP | ||