| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor which has high adhesion between an organic semiconductor layer and a sealing layer and is excellent in long-term stability.SOLUTION: The thin-film transistor includes at least a gate electrode, a gate insulating layer, a source electrode, a drain electrode, an organic semiconductor layer, and a sealing layer on an insulating substrate. The source electrode and the drain electrode are composed of at least one metal, and the sealing layer contains a compound bonded to metal ions constituting the source electrode and the drain electrode. Thus, adhesion between the sealing layer and both the source electrode and the drain electrode is improved, thereby allowing the thin-film transistor excellent in long-term stability to be obtained. |
